Modeling and Characterization of graphene-silicon schottky diode as a THz detector
Publish Year: 1393
نوع سند: مقاله کنفرانسی
زبان: English
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شناسه ملی سند علمی:
ICNN05_333
تاریخ نمایه سازی: 30 آبان 1394
Abstract:
in this paper, we simulate graphene–silicon schottky barrier diode devices using technology computer aideddesign, TCAD tools software and compare schottky barrier Au-Si with Graphene-Si. Also, we investigate the physicalstructure of diode like Silicon concentration doping, position of the cathode when changing the thickness of the siliconand Effect of the width of graphene. This study present DC current-voltage, I-V characteristic of schottky diode and weobtain the optimal diode performance in DC mode. Also, we showed that by consideration of equivalent circuit of diodeand AC impedance, we can use it as a high frequency (THz) detector.
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Authors
M Allahbakhshi
Elite Advanced Research Center, Tehran, Iran
M Monzavi Ghachkanloo
Elite Advanced Research Center, Tehran, Iran