Influence of contact doping on the performance of graphene nanoribbon field effect transistor
Publish Year: 1393
نوع سند: مقاله کنفرانسی
زبان: English
View: 390
متن کامل این Paper منتشر نشده است و فقط به صورت چکیده یا چکیده مبسوط در پایگاه موجود می باشد.
توضیح: معمولا کلیه مقالاتی که کمتر از ۵ صفحه باشند در پایگاه سیویلیکا اصل Paper (فول تکست) محسوب نمی شوند و فقط کاربران عضو بدون کسر اعتبار می توانند فایل آنها را دریافت نمایند.
- Certificate
- من نویسنده این مقاله هستم
استخراج به نرم افزارهای پژوهشی:
شناسه ملی سند علمی:
ICNN05_783
تاریخ نمایه سازی: 30 آبان 1394
Abstract:
this paper, we investigated the device performance of Graphene Nanoribbon Field Effect Transistor (GNRFET) as a function of contact doping concentrations. The simulations were based on the non- equilibrium Green’s function (NEGF) formalism coupled with a two dimensional Poisson equation under ballistic regime in mode space representation. By applying proper symmetric source and drain doping concentrations, It was observed that the GNRFET with low doping concentration has higher transconductance, lower Subthreshold Swing, lower off- current (Ioff), and higher ratio of on-current to off- current (Ion/Ioff). Moreover, The GNRFET with high doping concentration has smaller quantum capacitance, higher intrinsic cut- off frequency, and lower gate capacitance in comparison with low doping GNRFET.
Keywords:
Graphene Nanoribbon FET , Non Equilibrium Green’s function (NEGF) , Doping concentration , Deviceperformance
Authors
M Akbari Eshkalak
Departmentof Electrical Engineering, Islamic Azad University of Qazvin, Qazvin, Iran
R Faez
Department of Electrical Engineering, Sharif University Of Technology, Tehran, Iran
P Ataei
Departmentof Electrical Engineering, Islamic Azad University of Qazvin, Qazvin, Iran