New reduction technique for graphene oxide thin films to use as transparent conductive electrodes in optoelectronic devices

Publish Year: 1393
نوع سند: مقاله کنفرانسی
زبان: English
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شناسه ملی سند علمی:

ICNN05_786

تاریخ نمایه سازی: 30 آبان 1394

Abstract:

Graphene is a transparent and conductive material which can be used as a good substitute for traditional transparent electrodes such as indium tin oxide (ITO) for optoelectronic devices. In this paper, we have made a thin film of reduced graphene oxide using graphene oxide by spin- coating at 4 mg/ml concentration. The conductive transparent layer then is used as lower electrode to make organic light emitting diode (OLED). Reduction of graphene oxide (GO) thin films were carried out in two stages; chemically treatment followed by thermal annealing. The maximum transparency and minimum sheet resistance obtained at 4 mg/ml, were 70% and 642 (Ω/sq) respectively. Finally, after making OLED based on r-Go, the l-V characteristic and electroluminescence were measured. Results showed that graphene thin films are promising materials for OLEDs, solar cells and othertransparent optoelectronic devices.

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Authors

M Alahbakhshi

Laser and plasma Research Institute, Shahid Beheshti University G.C., Tehran, Iran

A Fallahi

Department of Polymer Engineering and Color Technology, Amirkabir University of Technology, Tehran, Iran

E Mohajerani

Laser and plasma Research Institute, Shahid Beheshti University G.C., Tehran, Iran

M Kohkan

Laser and plasma Research Institute, Shahid Beheshti University G.C., Tehran, Iran