Graphene nanoribbon field effect transistor with engineered source and drain regions

We propose a new double-lightly doped graphene nanoribbon field effect transistor (DLD-GNRFET) inwhich each part of the source and drain regions are doped with different doping concentrations. The length of dopedregions and their doping concentrations are optimized to obtain the best device performance. For simulating the devicecharacteristics, the Poisson and Schrödinger equations are solved self-consistently using the non-equilibrium Green’sfunction (NEGF) formalism with the tight-binding approximation, considering only pz orbitals. The simulation resultsshow that, the band-to-band tunneling (BTBT) and ambipolar behavior in the proposed DLD-GNRFET have beensignificantly reduced and consequently, the power dissipation and off-current are decreased. Moreover, the proposedstructure has small drain induced barrier lowering (DIBL) in comparison with the conventional GNRFETs (CGNRFETs).

Keywords:

Graphene nanoribbon , Field effect transistor , Double-lightly doped , NEGF