A Sub-Critical Barrier Thickness Normally-Off AlGaN/GaN MOS-HEMT Based-HfLaO Gate Oxide
Publish place: کنفرانس بین المللی مهندسی برق
Publish Year: 1395
نوع سند: مقاله کنفرانسی
زبان: English
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شناسه ملی سند علمی:
ICELE01_448
تاریخ نمایه سازی: 21 شهریور 1395
Abstract:
The article presents the results of modelling and simulation of normally-off AlGaN/GaN MOS-HEMT transistors.The use of high-k dielectrics at thicknesses of 5, 10, and 20 nm and ultrathin sub-critical 3 nm Al0.25Ga0.75N barrier layer on the electrical characteristics of the transistor has been examined. The electrical performances of, threshold voltage, on- and off- currents and transconductance of the device were extracted from TCAD Silvaco-Atlas simulator tool.It was found that the maximum current of the device can reach 426 mA at Vgs = 5V with an off-state current of less than 3.26×10-16A, leads to an on/off current ratio of 1.3× 1015, at 5 nm insulator thick. The device shows a high transconductance of 130 mS/mm and threshold voltage of 1.36 V. It has been demonstrated that the use of HfLaO, instead of HfO2 and La2O3, as GOX (gate oxide) increases on-state current above 0.4 A and reduces the negative influence of the charge accumulated in the dielectric layer
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Authors
a balali
Faculty of Electrical and Computer Engineering, Hakim Sabzevari University, Sabzevar 9617976487, Iran
m.h shahrokhabadi
Faculty of Electrical and Computer Engineering, Hakim Sabzevari University, Sabzevar 9617976487, Iran
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