Influential parameters on operation of optical injection-locked semiconductor lasers

We present in this paper how strong optical injection can produce various dynamics in the output of the semiconductor laser that is preferable for perfect encrypted optical communication networks. Numerical investigations under the condition of strong optical injection locking of the slave laser shows that instabilities in the photon number was observed and had settled down after a time of in the order of carrier lifetime. Using the conventional rate equations describing an injection-locked system, a novel modulation response function is derived, which implicitly incorporates nonlinear gain through the free-running relaxation oscillation frequency and damping rate of the slave laser. The results of calculations shoed that thickness of the active region, coefficient of gain saturation and the gain coefficient have an effective role in rate equations of optical injection-locked semiconductor lasers. Increasing thickness of the active region, increased the photon and carrier numbers as like as coefficient of gain saturation. With increasing gain coefficient carrier and photons number had been stable sooner and gain coefficient did not effect on the phase.

Keywords:

injection-locked , active region , saturation , gain