Effect of Doping on Optoelectronic Properties of Tin Dioxide Layers Produced by Chemical Deposition
Publish Year: 1394
نوع سند: مقاله کنفرانسی
زبان: English
View: 508
This Paper With 5 Page And PDF Format Ready To Download
- Certificate
- من نویسنده این مقاله هستم
استخراج به نرم افزارهای پژوهشی:
شناسه ملی سند علمی:
KBEI02_159
تاریخ نمایه سازی: 5 بهمن 1395
Abstract:
Tin dioxide and metallic impurity (Cu, Fe) doped stannic oxide Nano layers were produced by chemical bath deposition method on glass substrates. The effects of doping on optoelectronic properties of stannic oxide Nano layers were studied. Optical Reflectance measured in the wavelength range of 220-2500 nm by spectrophotometer. Other optical properties and optical band gaps were calculated using Kramers-Kronig relations on reflectivity curves. Electronic properties were calculated by full potential linearized augmented plane wave (FP-LAPW) method, within density functional theory (DFT). In this approach, the generalized gradient approximation (GGA) in the form of the LSDA functional was used for the exchange-correlation potential calculations. Band gap structures and density of states were calculated. Doping impurity changes optical properties of Tin dioxide layers. Metallic impurities, specially copper, decreases the band gap energy and increases conductivity of layers. Value of band gap calculated by DFT method for SnO2 compound obtained 1.2 eV. All results are in good agreement with each other.
Keywords:
Authors
Haleh kangarlou
Department of physics Islamic Azad University, Urmia branch Urmia, Iran
Parisa Esmaili
Young Researchers and Elite Club, Islamic Azad University, Urmia branch Urmia, Iran