Investigation of a SiGe Tunnel FET: Comparison to Si and Ge TFETs
Publish place: Journal of Electrical Systems and Signals، Vol: 2، Issue: 1
Publish Year: 1393
نوع سند: مقاله ژورنالی
زبان: English
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شناسه ملی سند علمی:
JR_JESS-2-1_004
تاریخ نمایه سازی: 19 شهریور 1396
Abstract:
In this paper a SiGe p+n+in+ tunneling transistor is studied and compared with Si and Ge based transistors. Moreover, in the proposed structure a -doped n+ region is considered between the source and the channel, and this region is optimized in the sense of region width (Wd) and doping level for the highest ratio of on-current to off-current and the lowest sub-threshold swing. Simulations show that Ion/Ioff ratio greater than 11 order of magnitude and sub-threshold swing of 16.6 mv/dec, which is well below 60 mv/dec limit of conventional MOSFETs, are obtained.
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Authors
Mohammad Kamali Moghadam
Quchan University of Advanced Technology, Quchan, Iran
Seyed Ebrahim Hosseini
Department of Electrical Engineering, Ferdowsi University of Mashhad, Iran.