Solution Phase Inorganic Ligand Exchange for Fabrication of Ink Based Quantum Dot Thin Films
Publish place: The 6th International Conference on Exhibitiion on Metallurgy and Materials Engineering
Publish Year: 1396
Type: Conference paper
Language: English
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Document National Code:
IMES11_477
Index date: 26 February 2018
Solution Phase Inorganic Ligand Exchange for Fabrication of Ink Based Quantum Dot Thin Films abstract
PbS quantum dots are the main part of such cells which absorb the photons, turn it into electron-hole pairs and transferred them to the side electrodes. However, during the application of such structure in air atmosphere, QDs immediately destroyed due to their weak oxidation stability. Surface defects increases the density of nanoparticles surface damages and lead to charge carrier’s recombination, which ultimately reduces the cell s performance. Photoluminescence measurements indicated that solution phase exchange of oleic acid to iodide based ligands improved air exposure oxidation of solid films. FTIR and XRD analyses also confirmed successful ligand exchange process and QDs stability in air. Subsequently, such prepared inks are used to fabricate quantum dot thin films.
Solution Phase Inorganic Ligand Exchange for Fabrication of Ink Based Quantum Dot Thin Films Keywords:
Solution Phase Inorganic Ligand Exchange for Fabrication of Ink Based Quantum Dot Thin Films authors
Hossein Beygi
PhD Student in materials science and metallurgical engineering
Seyyed Abdolkarim Sajjadi
Professor in materials science and metallurgical engineering
Abolfazl Babakhani
Associate professor in materials science and metallurgical engineering
Jeff F. Young
Professor in physics