Quantum analytical modeling and simulation of CNT on insulator (COI) and CNT on nothing (CON) FET: a comparative analysis

A comprehensive performance analysis byquantum analytical modeling of CNT on insulator (COI)and CNT on nothing (CON) FET having channel length20 nm has been proposed and investigated on the basis of2D Poisson’s Equation and solution of 1-D Schrodinger’sEquation and validated using ATLAS 2D simulator. Asclassical approximations fail to describe carrier quantization,charge inversion and potential profile of a device atsub-100 nm regime, here for the first time an analyticalmodel in quantum mechanical aspect for COI/CON deviceshas been derived. Effects of high-k dielectrics in place ofconventional SiO(2) over the device characteristics havebeen thoroughly discussed. Moreover, all noticeable benefitsof our device to the so called SOI/SON architecturehave also been vividly justified.