Improving Switching and Electrical Characteristics of a Silicon Nanowire Tunnel FET via Gate Oxide Engineering Method
Publish place: 3rd International Conference on Electrical Engineering
Publish Year: 1397
Type: Conference paper
Language: English
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Document National Code:
ICELE03_448
Index date: 9 March 2019
Improving Switching and Electrical Characteristics of a Silicon Nanowire Tunnel FET via Gate Oxide Engineering Method abstract
In this letter, first the structure and electrical characteristics of a Vertical Silicon Nanowire Tunnel FET will beinvestigated and its characteristics obtained via numerical simulations. Then the Gate Oxide of this device, replaced witha bilayer one via the scientific and applicable method of Gate Oxide Engineering. After altering the Gate oxide, weobserved improvements in both electrical and switching characteristics of the device. The improved characteristics of theproposed device are 2 × 10−5 for ON-state current (48% more), 0.51 V for Threshold Voltage (18% improvement) andSubthreshold Swing 32mV/dec (25% improvement) with respect to the reference device. Off-state Current remainedunaffected, hence ION/IOFF ratio improved from 9.0 × 1011 to 1.33 × 1012 which means 48% more drive current atVDS=1.2V.
Improving Switching and Electrical Characteristics of a Silicon Nanowire Tunnel FET via Gate Oxide Engineering Method Keywords:
Improving Switching and Electrical Characteristics of a Silicon Nanowire Tunnel FET via Gate Oxide Engineering Method authors
Mohamad Zaker Moshfegh
MSc Student, Semnan University, ECE Faculty, Semnan, Iran
Saeed Mohammadi
Assistant Professor, Semnan University, ECE Faculty, Semnan, Iran