Negative-Capacitance Effects in 2D Double Gate Field-Effect Transistors
Publish place: 3rd International Conference on Electrical Engineering
Publish Year: 1397
نوع سند: مقاله کنفرانسی
زبان: English
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شناسه ملی سند علمی:
ICELE03_536
تاریخ نمایه سازی: 18 اسفند 1397
Abstract:
In this paper, a new 2D double gate field effect transistor (DGFET) is presented. In the proposed structureferroelectric is used in double side of the DGFET and single layer MoS2 has been used as the channel of the DGFET.The effect of ferroelectric layer on the subthreshold swing is investigated in the proposed DGFET using an analyticalsubthreshold model. Analytical models demonstrate that using ferroelectric in double side of 2-D DGFET improvesaverage subthreshold swing to about 18 mV/dec.
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Authors
Manouchehr Hosseini
Department of Electrical Engineering, Bu-Ali Sina University, Hamedan, Iran
Hamidreza Karami
Department of Electrical Engineering, Bu-Ali Sina University, Hamedan, Iran
Zahra Sohrabi
Department of Electrical Engineering, Bu-Ali Sina University, Hamedan, Iran