A High Gain and Forward Body Biastwo-stage Ultra-wideband Low Noise Amplifier with Inductive Feedback in 180 nm CMOS Process

This paper presents a two-stage low-noise ultra-wideband amplifier to obtain high and smooth gain in 180nm CMOS Technology. The proposed structure has two common source stages with inductive feedback. First stage is designed about 3GHz frequency and second stage is designed about 8GHz. In simulation, symmetric inductors of TSMC 0.18um CMOS technology in ADS software is used.Simulations results show high and relatively smooth S21 equal to 18.674±1.38dB, noise figure of less than 3.7dB, power consumption of 14.6mW with 1.2v supply voltage and suitable matching at the input (S11

Keywords:

Low Noise Amplifier , UWB , Inductive feedback

Authors

Jamal Ghasemi

Engineering and Technology, University of Mazandaran

Seyed Saeid Mousavi

Electrical Engineering, Mazandaran University of Sience and Technology

Mohammad Gholami

Electrical & Electronic Engineering, University of Mazandaran

Certificate
من نویسنده این مقاله هستم

استخراج به نرم افزارهای پژوهشی:

لینک ثابت به این Paper:

https://civilica.com/doc/963080

شناسه ملی سند علمی:

JR_IJE-31-9_011

تاریخ نمایه سازی: 10 آذر 1398

How to Cite to This Paper:

If you want to refer to this Paper in your research work, you can simply use the following phrase in the resources section:

Ghasemi, Jamal and Mousavi, Seyed Saeid and Gholami, Mohammad,1397,A High Gain and Forward Body Biastwo-stage Ultra-wideband Low Noise Amplifier with Inductive Feedback in 180 nm CMOS Process,https://civilica.com/doc/963080

Scientometrics

The specifications of the publisher center of this Paper are as follows:

Ranking of University of Mazandaran

Type of center: دانشگاه دولتی

Paper count: 17,362

In the scientometrics section of CIVILICA, you can see the scientific ranking of the Iranian academic and research centers based on the statistics of indexed articles.