فیلتر نتایج
Journal Paper
Performance Analysis of High-K Dielectric Heterojunction High Electron Mobility Transistor for RF Applications
Authors: E. Radhamma، D. Vemana Chary، A. Krishnamurthy، D. Venkatarami Reddy، D. Sreenivasa Rao، Y. Gowthami، B. Balaji
Year 1402
Publish place: International Journal of Engineering (IJE) Issue 9، Vol 36
Pages: 7 | Language: English
Conference Paper
Analysis of a Source Hetrojunction LDMOS Device with Strained Silicon Channel
Authors: Vala Fathipour، Mohamad Ali Malakoutian، Mortez Fathipour
Year 1390
Publish place: 19th Iranian Conference on Electric Engineering
Pages: 5 | Language: English