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Journal Paper
Controlling Ambipolar Current in a Junctionless Tunneling FET Emphasizing on Depletion Region Extension
Authors:
Morteza Rahimian
Year 1402
Publish place:
Journal of Optoelectronical Nanostructures Issue 1، Vol 8
Pages:
19
| Language: English
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Conference Paper
A Novel Junctionless Tunneling FET with Improved Ambipolar Current
Authors:
Morteza Rahimian
Year 1401
Publish place:
The 6th International Conference on Electrical, Computer and Mechanical Engineering
Pages:
7
| Language: English
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Journal Paper
Design and Realization of a Junction-less TFET for Analog and Digital Applications Based on Strain Engineering
Authors:
Fayzollah Khorramrouze
،
Seyed Ali Sedigh Ziabari
،
Ali Heydari
Year 1401
Publish place:
Telecommunication devices Issue 2، Vol 11
Pages:
8
| Language: English
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Journal Paper
Analysis and study of geometrical variability on the performance of junctionless tunneling field effect transistors: Advantage or deficiency?
Authors:
Fayzollah Khorramrouz
،
Seyed Ali Sedigh Ziabari
،
Ali Heydari
Year 1397
Publish place:
International Journal of Nano Dimension Issue 3، Vol 9
Pages:
13
| Language: English
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Journal Paper
A design of improved nanoscale U-Shaped TFET by energy band modification for high performance digital and analog/RF applications
Authors:
Melisa Ebrahimnia
،
Seyed Ali Sedigh Ziabari
،
Azadeh Kiani-Sarkaleh
Year 1400
Publish place:
International Journal of Nano Dimension Issue 3، Vol 12
Pages:
14
| Language: English
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Conference Paper
Ambipolar Current and Stability Enhancement Tunneling Field-Effect Transistor for Stable High-Speed Switching Relay
Authors:
Mohamad Tolue Khayami
،
Saeid Marjani
Year 1399
Publish place:
6th National Conference on Applied Research in Electrical, Mechanical and Mechatronics Engineering
Pages:
5
| Language: English
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