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فیلتر نتایج
نتایج 1 تا 10 از مجموع 42
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Journal Paper
Design and Simulation of an Efficient Quaternary Full-Adder Based on Carbon Nanotube Field Effect Transistor
Authors:
Farzaneh Ahari
،
Mousa Yousefi
،
Khalil Monfaredi
Year 1403
Publish place:
International Journal of Industrial Electronics, Control and Optimization Issue 2، Vol 7
Pages:
12
| Language: English
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Journal Paper
Accurate Analytical Modeling of Drain Current of Heterojunction Tunneling Field Effect Transistor
Authors:
F. Peyravi
،
S. E. Hosseini
Year 1403
Publish place:
International Journal of Engineering (IJE) Issue 7، Vol 37
Pages:
12
| Language: English
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Conference Paper
Design and Simulation of Reconfigurable Logic Circuit Based on CNTFET by Implementing Various Logical Functions
Authors:
Amir Baghi Rahin
،
Afshin Kadivarian
،
Vahid Baghi Rahin
Year 1402
Publish place:
The first international conference and the seventh national conference on electrical engineering and intelligent systems
Pages:
8
| Language: English
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Journal Paper
Performance Analysis of a Steep-Slope Bi-channel GaSb-GaAs Extended Source Tunnel Field Effect Transistor with Enhanced Band-to-Band Tunneling Current
Authors:
Zahra Ahangari
Year 1402
Publish place:
Journal of Applied Research in Electrical Engineering Issue 2، Vol 2
Pages:
8
| Language: English
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Journal Paper
Simulation for a low-energy ternary multiplier cell based on Graphene nanoribbon field-effect transistor
Authors:
Zahra Rohani
،
Azadeh Alsadat Emrani Zarandi
Year 1403
Publish place:
International Journal of Nano Dimension Issue 1، Vol 15
Pages:
14
| Language: English
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Journal Paper
Performance Optimization of an Electrostatically Doped Staggered Type Heterojunction Tunnel Field Effect Transistor with High Switching Speed and Improved Tunneling Rate
Authors:
Mahdi Mohammadkhani Ghiasvand
،
Zahra Ahangari
،
Hamed Nematian
Year 1401
Publish place:
Journal of Optoelectronical Nanostructures Issue 1، Vol 7
Pages:
18
| Language: English
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Journal Paper
Switching Performance of Nanotube Core-Shell Heterojunction Electrically Doped Junctionless Tunnel Field Effect Transistor
Authors:
Zahra Ahangari
Year 1399
Publish place:
Journal of Optoelectronical Nanostructures Issue 2، Vol 5
Pages:
12
| Language: English
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Journal Paper
ارائه ساختار مقایسه کننده سه سطحی چند ورودی کامل بر پایه ترانزیستور اثر میدانی نانو لوله کربنی
Authors:
موسی یوسفی
Year 1402
Publish place:
Journal of Iranian Association of Electrical and Electronics Engineers Issue 1، Vol 21
Pages:
9
| Language: Persian
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Conference Paper
Ring Oscillator with Frequency Adjustment and Reconfiguration Capability Using Switched NAND-NOR
Authors:
Amir Baghi Rahin
،
Afshin Kadivarian
،
Morteza Dadgar
Year 1402
Publish place:
12th National Conference on Electrical Engineering
Pages:
8
| Language: English
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Conference Paper
Novel Structures of Double Gate Ferroelectric Dopingless Tunneling Field-Effect Transistors
Authors:
Saeid Marjani
Year 1402
Publish place:
The 8th International Conference on Technology Development in Electrical Engineering in Iran
Pages:
7
| Language: English
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نتایج 1 تا 10 از مجموع 42
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