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فیلتر نتایج
Journal Paper
Performance Analysis of a Steep-Slope Bi-channel GaSb-GaAs Extended Source Tunnel Field Effect Transistor with Enhanced Band-to-Band Tunneling Current
Authors:
Zahra Ahangari
Year 1402
Publish place:
Journal of Applied Research in Electrical Engineering Issue 2، Vol 2
Pages:
8
| Language: English
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Journal Paper
Performance Optimization of an Electrostatically Doped Staggered Type Heterojunction Tunnel Field Effect Transistor with High Switching Speed and Improved Tunneling Rate
Authors:
Mahdi Mohammadkhani Ghiasvand
،
Zahra Ahangari
،
Hamed Nematian
Year 1401
Publish place:
Journal of Optoelectronical Nanostructures Issue 1، Vol 7
Pages:
18
| Language: English
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Journal Paper
Performance Investigation of a Perovskite Solar Cell with TiO۲ and One Dimensional ZnO Nanorods as Electron Transport Layers
Authors:
Shahram Rafiee Rafat
،
Zahra Ahangari
،
Mohammad Mahdi Ahadian
Year 1400
Publish place:
Journal of Optoelectronical Nanostructures Issue 2، Vol 6
Pages:
16
| Language: English
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Journal Paper
Switching Performance of Nanotube Core-Shell Heterojunction Electrically Doped Junctionless Tunnel Field Effect Transistor
Authors:
Zahra Ahangari
Year 1399
Publish place:
Journal of Optoelectronical Nanostructures Issue 2، Vol 5
Pages:
12
| Language: English
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Conference Paper
Design and Implementation of a Smith Estimator-based PID Controller for Single-linkRobotic Manipulator with time delay
Authors:
Zahra Ahangari Sisi
،
Mehdi Mirzaei
،
Sadra Rafatnia
،
Mehrnaz Banaeian
Year 1402
Publish place:
The 31st annual conference between Iran Mechanical Engineering and the 9th Iran Power Plant Industry Conference
Pages:
5
| Language: English
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Journal Paper
Novel attributes of steep-slope staggered type heterojunction p-channel electron-hole bilayer tunnel field effect transistor
Authors:
Zahra Ahangari
Year 1398
Publish place:
International Journal of Nano Dimension Issue 4، Vol 10
Pages:
9
| Language: English
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Conference Paper
A Comparative Study on the Effect of Teacher and Peer Assessment on Grammar Learning of the Iranian High School EFL Students
Authors:
aylar ghaziani
،
khadijeh jafari
،
fatemeh zahra Ahangarian
Year 1395
Publish place:
Pages:
12
| Language: English
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Conference Paper
Study of Quantum Transport in Nanoscale Double Gate Schottky SOI MOSFET on Arbitrarily Orientated Wafers:Non-equilibrium Green's Function Formalism
Authors:
Zahra Ahangari
،
Morteza Fathipour
Year 1391
Publish place:
First Iranian Conference on Nano Electronics
Pages:
6
| Language: English
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Conference Paper
Novel Asymmetric Gate Oxide Thickness Technology for Reduction of Gate Induced Drain Leakage Current in Nanoscale MOSFET Device for Low Power Applications
Authors:
Morteza Fathipour
،
Mahdi Vadizadeh
،
Zahra Ahangari
،
Fatemeh Kohani
Year 1387
Publish place:
16th Iranian Conference on Electric Engineering
Pages:
6
| Language: English
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