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فیلتر نتایج
نتایج 1 تا 10 از مجموع 18
1
2
Journal Paper
Voltage Difference Technique in Junctionless Tunneling FET for Suppression of Ambipolar Conduction Controlling
Authors:
Morteza Rahimian
Year 1402
Publish place:
Journal of Optoelectronical Nanostructures Issue 4، Vol 8
Pages:
12
| Language: English
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Journal Paper
Controlling Ambipolar Current in a Junctionless Tunneling FET Emphasizing on Depletion Region Extension
Authors:
Morteza Rahimian
Year 1402
Publish place:
Journal of Optoelectronical Nanostructures Issue 1، Vol 8
Pages:
19
| Language: English
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Journal Paper
Performance Optimization of an Electrostatically Doped Staggered Type Heterojunction Tunnel Field Effect Transistor with High Switching Speed and Improved Tunneling Rate
Authors:
Mahdi Mohammadkhani Ghiasvand
،
Zahra Ahangari
،
Hamed Nematian
Year 1401
Publish place:
Journal of Optoelectronical Nanostructures Issue 1، Vol 7
Pages:
18
| Language: English
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Journal Paper
Switching Performance of Nanotube Core-Shell Heterojunction Electrically Doped Junctionless Tunnel Field Effect Transistor
Authors:
Zahra Ahangari
Year 1399
Publish place:
Journal of Optoelectronical Nanostructures Issue 2، Vol 5
Pages:
12
| Language: English
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Conference Paper
Two Dimensional Analytical Modeling and Simulation for Junctionless Tunneling Field Effect Transistors
Authors:
Morteza Rahimian
Year 1401
Publish place:
The 7th International Conference on Electrical Engineering, Computer Science and Information Technology
Pages:
15
| Language: English
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Conference Paper
N-P-N Bipolar Action in Junctionless TFET: A Modified Current Mechanism for Electrical Performance Improvement
Authors:
Morteza Rahimian
Year 1401
Publish place:
The 7th International Conference on Electrical Engineering, Computer Science and Information Technology
Pages:
9
| Language: English
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Conference Paper
A Novel Junctionless Tunneling FET with Improved Ambipolar Current
Authors:
Morteza Rahimian
Year 1401
Publish place:
The 6th International Conference on Electrical, Computer and Mechanical Engineering
Pages:
7
| Language: English
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Conference Paper
Scaling Behavior of p-type Junctionless Field Effect Transistors with Different Channel Materials
Authors:
F. Bajelan
Year 1401
Publish place:
7th International Conference on Electrical, Electronics and Smart Grid Engineering
Pages:
9
| Language: English
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Journal Paper
Gate structural engineering of MOS-like junctionless Carbon nanotube field effect transistor (MOS-like J-CNTFET)
Authors:
Maryam Faraji
،
Seyed Saleh Ghoreishi
،
Reza Yousefi
Year 1397
Publish place:
International Journal of Nano Dimension Issue 1، Vol 9
Pages:
9
| Language: English
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Journal Paper
Analysis and study of geometrical variability on the performance of junctionless tunneling field effect transistors: Advantage or deficiency?
Authors:
Fayzollah Khorramrouz
،
Seyed Ali Sedigh Ziabari
،
Ali Heydari
Year 1397
Publish place:
International Journal of Nano Dimension Issue 3، Vol 9
Pages:
13
| Language: English
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نتایج 1 تا 10 از مجموع 18
1
2