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فیلتر نتایج
نتایج 1 تا 10 از مجموع 27
1
2
3
Journal Paper
Dual-Channel Indium Nitride Tunnel Field Effect Transistor: A Comprehensive Study on Design, Sensitivity, and Electrical Performance
Authors:
Zahra Ahangari
Year 1402
Publish place:
Journal of Modeling & Simulation in Electrical & Electronics Engineering Issue 4، Vol 2
Pages:
9
| Language: English
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Journal Paper
The effect of energy band gap of channel transistor region on npn transistor performance; a numerical study
Authors:
Mohammad Kamali Moghaddam
،
Ehsan Koushki
Year 1403
Publish place:
The Progress in Physics of Applied Materials Issue 2، Vol 4
Pages:
6
| Language: English
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Journal Paper
Switching Performance of Nanotube Core-Shell Heterojunction Electrically Doped Junctionless Tunnel Field Effect Transistor
Authors:
Zahra Ahangari
Year 1399
Publish place:
Journal of Optoelectronical Nanostructures Issue 2، Vol 5
Pages:
12
| Language: English
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Journal Paper
Design and Performance Analysis of ۶H-SiC Metal-Semiconductor Field-Effect Transistor with Undoped and Recessed Area under Gate in ۱۰nm Technology
Authors:
A. Krishnamurthy
،
D. Venkatarami Reddy
،
E. Radhamma
،
B. Jyothirmayee
،
D. Sreenivasa Rao
،
V. Agarwal
،
B. Balaji
Year 1402
Publish place:
International Journal of Engineering (IJE) Issue 12، Vol 36
Pages:
8
| Language: English
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Conference Paper
N-P-N Bipolar Action in Junctionless TFET: A Modified Current Mechanism for Electrical Performance Improvement
Authors:
Morteza Rahimian
Year 1401
Publish place:
The 7th International Conference on Electrical Engineering, Computer Science and Information Technology
Pages:
9
| Language: English
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Journal Paper
Performance Optimization of Broadwell-Y Shaped Transistor Using Artificial Neural Network and Moth-Flame Optimization Technique
Authors:
Navneet Kaur
،
Munish Rattan
،
Sandeep Gill
Year 1397
Publish place:
majlesi Journal of Electrical Engineering Issue 1، Vol 12
Pages:
9
| Language: English
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Journal Paper
Ultra Low Power Temperature Compensated Complementary Metal Oxide Semiconductor Ring Oscillator in Subthreshold
Authors:
E. Sadeghi
،
E. Ebrahimi
Year 1402
Publish place:
International Journal of Engineering (IJE) Issue 1، Vol 36
Pages:
11
| Language: English
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Journal Paper
Band bending engineering in p-i-n gate all around Carbon nanotube field effect transistors by multi-segment gate
Authors:
Ali Naderi
،
Behrooz Abdi Tahne
Year 1396
Publish place:
International Journal of Nano Dimension Issue 4، Vol 8
Pages:
10
| Language: English
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Journal Paper
Novel attributes of steep-slope staggered type heterojunction p-channel electron-hole bilayer tunnel field effect transistor
Authors:
Zahra Ahangari
Year 1398
Publish place:
International Journal of Nano Dimension Issue 4، Vol 10
Pages:
9
| Language: English
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Journal Paper
Design, simulation and analysis of high-K gate dielectric FinField effect transistor
Authors:
Marupaka Aditya
،
Karumuri Srinivasa Rao
،
Kondavitee Girija Sravani
،
Koushik Guha
Year 1400
Publish place:
International Journal of Nano Dimension Issue 3، Vol 12
Pages:
5
| Language: English
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نتایج 1 تا 10 از مجموع 27
1
2
3