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فیلتر نتایج
Journal Paper
Simulation for a low-energy ternary multiplier cell based on Graphene nanoribbon field-effect transistor
Authors:
Zahra Rohani
،
Azadeh Alsadat Emrani Zarandi
Year 1403
Publish place:
International Journal of Nano Dimension Issue 1، Vol 15
Pages:
14
| Language: English
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Journal Paper
Designing a Novel high-speed ternary-logic multiplier using GNRFET Technology
Authors:
Zahra Rohani
،
Azadeh Alsadat Emrani Zarandi
Year 1402
Publish place:
Journal of Optoelectronical Nanostructures Issue 1، Vol 8
Pages:
12
| Language: English
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Journal Paper
ارائه ساختار مقایسه کننده سه سطحی چند ورودی کامل بر پایه ترانزیستور اثر میدانی نانو لوله کربنی
Authors:
موسی یوسفی
Year 1402
Publish place:
Journal of Iranian Association of Electrical and Electronics Engineers Issue 1، Vol 21
Pages:
9
| Language: Persian
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Journal Paper
An Ultra-low Power Ternary Multi-digit Adder Applies GDI Method for Binary Operations
Authors:
N. Ahmadzadeh Khosroshahi
،
M. Dehyadegari
،
F. Razaghian
Year 1402
Publish place:
Journal of Electrical and Computer Engineering Innovations Issue 1، Vol 11
Pages:
14
| Language: English
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Journal Paper
Two Efficient Ternary Adder Designs Based On CNFET Technology
Authors:
Masoud Mahjoubi
،
Morteza Dadashi
،
Kooroush Manochehri
،
Saadat Pourmozafari
Year 1400
Publish place:
Computer and Knowledge Engineering Issue 1، Vol 4
Pages:
10
| Language: English
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Journal Paper
تاثیر ترانزیستورهای DTMOS بر عملکرد یک سلول حافظه CAM سهارزشی مبتنی بر ممریستور در کاربردهای توانپایین
Authors:
مریم توحیدی
،
سیده فاطمه مولاییزاده
،
مجتبی گندم کار
Year 1399
Publish place:
Journal of Iranian Association of Electrical and Electronics Engineers Issue 1، Vol 18
Pages:
12
| Language: Persian
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Conference Paper
Introduction to Timas Algebra
Authors:
N karimi
Year 1399
Publish place:
National Conference on Professional Applied in Education Processes
Pages:
11
| Language: English
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Conference Paper
Analysis and simulation of novel CNTFET based full adders
Authors:
Shabnam Qasemi
،
Poya Soleimani Abhari
Year 1397
Publish place:
3rd International Conference on Electrical Engineering
Pages:
10
| Language: English
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