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Conference Paper
Double N+ Silicon Windows In Active Region And Buried Oxide Of LDMOS To Achieve NHigh Breakdown Voltage And Low Lattice Temperature
Authors:
Mahsa Mehrad
،
Elmira Safarpour
Year 1395
Publish place:
Pages:
6
| Language: English
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Conference Paper
P-Regions With U Shape Beneath N-Drift Region In LDMOS Transistor (UND-LDMOS) A Novel Technique For Electric Field Control To Improve Breakdown Voltage
Authors:
Mahsa Mehrad
،
Elmira Safarpour
،
Meysam Zareiee
Year 1395
Publish place:
Pages:
7
| Language: English
View And Download