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Journal Paper
Non-radiative Auger Current in a InGaN/GaN Multiple Quantum Well Laser Diode under Hydrostatic Pressure and Temperature
Authors:
Rajab Yahyazadeh
،
Zahra Hashempour
Year 1402
Publish place:
Journal of Optoelectronical Nanostructures Issue 2، Vol 8
Pages:
27
| Language: English
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Journal Paper
Effect of Hydrostatic Pressure on Optical Absorption Coefficient of InGaN/GaN of Multiple Quantum Well Solar Cells
Authors:
Rajab yahyazadeh
،
zahra hashempour
Year 1400
Publish place:
Journal of Optoelectronical Nanostructures Issue 2، Vol 6
Pages:
22
| Language: English
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Journal Paper
Numerical Modeling of Electronic and Electrical Characteristics of ۰.۳ ۰.۷ Al Ga N / GaN Multiple Quantum Well Solar Cells
Authors:
Rajab yahyazadeh
،
zahra hashempour
Year 1399
Publish place:
Journal of Optoelectronical Nanostructures Issue 3، Vol 5
Pages:
21
| Language: English
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Conference Paper
Analytical-Numerical model for Gate Leakage Current in AlGaN/GaN High Electron Mobility Transistors Under Hydrostatic Pressure Effect
Authors:
Zahra Hashempour
،
Rajab Yahyazadeh
Year 1399
Publish place:
International Conference on Nanotechnologu & Nanoscience
Pages:
5
| Language: English
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Journal Paper
تاثیر فشار و دما بر ترانزیستورهای اثر میدان با تحرک بالای الکترونی AlGaN/GaN
Authors:
Rajab Yahyazadeh
Year 1398
Publish place:
The Journal of Interfaces, Thin Films and Low dimensional systems Issue 2، Vol 2
Pages:
12
| Language: English
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