فیلتر نتایج
Journal Paper
Investigation and Analysis of Dual Metal Gate Overlap on Drain Side Tunneling Field Effect Transistor with Spacer in ۱۰nm Node
Authors: S. Howldar، B. Balaji، K. Srinivasa Rao
Year 1403
Publish place: International Journal of Engineering (IJE) Issue 5، Vol 37
Pages: 9 | Language: EnglishJournal Paper
Gate Oxide Thickness and Drain Current Variation of Dual Gate Tunnel Field Effect Transistor
Authors: S. Howldar، B. Balaji، K. Srinivasa Rao
Year 1403
Publish place: International Journal of Engineering (IJE) Issue 3، Vol 37
Pages: 9 | Language: EnglishJournal Paper
Design and Analysis of Hetero Dielectric Dual Material Gate Underlap Spacer Tunnel Field Effect Transistor
Authors: S. Howldar، B. Balaji، K. Srinivasa Rao
Year 1402
Publish place: International Journal of Engineering (IJE) Issue 12، Vol 36
Pages: 8 | Language: EnglishJournal Paper
Design and Qualitative Analysis of Hetero Dielectric Tunnel Field Effect Transistor Device
Authors: S. Howldar، B. Balaji، K. Srinivasa Rao
Year 1402
Publish place: International Journal of Engineering (IJE) Issue 6، Vol 36
Pages: 7 | Language: English