Numerical analysis of long channel CNT-FET by considering field dependent mobility
Publish place: 3rd International Conference on Electrical Engineering
Publish Year: 1397
نوع سند: مقاله کنفرانسی
زبان: English
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شناسه ملی سند علمی:
ICELE03_219
تاریخ نمایه سازی: 18 اسفند 1397
Abstract:
While much numerical studies have been done for short channel carbon nanotube field effect transistors (CNT-FETs),there are only a few numerical reports for long channel devices. The Long channel CNT-FETs are widely used inChemical sensors and biosensors as well as light emitters. Therefore numerical study is helpful to better understandingthe behavior of such devices. In this paper, we numerically analyze long-channel CNT-FETs. To increase the accuracyof simulation, especially for the case of higher bias, filed-dependent mobility was applied to the equations. Obtainedresults are in consistent with experimental data. The effect of gate voltage and CNT diameter on the current wasinvestigated.
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Authors
Sajjad Dehghani
Faculty of advanced technologies, Shiraz University, Shiraz, Iran