5GHz Shunted PCNTFET-based hybrid-circuit VCO
Publish place: 3rd International Conference on Electrical Engineering
Publish Year: 1397
نوع سند: مقاله کنفرانسی
زبان: English
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شناسه ملی سند علمی:
ICELE03_279
تاریخ نمایه سازی: 18 اسفند 1397
Abstract:
A high-frequency and low-power Voltage-Controlled Oscillator (VCO) circuit has been proposed here. Thepresented structure is based on the three-stage Current-Starved topologies having compensated pull-up structure. Thecircuit is implemented using 32 nm technology of p-type and n-type Carbon Nanotube Field-Effect Transistors. The pcarriercompensation shunt structure is exploited for the second stage of the VCO to increase the rise time of theSchmitt trigger part. The presented shunted transistor topology demonstrates simultaneous improvement in thedissipation power and the oscillation frequency. On average, a 20% reduction in the power consumption, two timesenhancement in the oscillation frequency and larger tuning range are reported here with respect to previously presentedVCO topology. In addition, several design and characteristics parameters such as Gate oxide thickness, inter-CNT pitchand chirality are considered here and their impact on the power dissipation and the oscillation frequency is studied.
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Authors
Hamidreza Ghanbari Khorram
Department of Electrical Engineering, Hamedan University of Technology, Hamedan ۶۵۱۵۵, Iran
Alireza Kokabi
Department of Electrical Engineering, Hamedan University of Technology, Hamedan ۶۵۱۵۵, Iran