Impact Ionization Effects on the Efficiency of Quantum Dot Solar Cells
Publish place: 2nd National Conference on Optic and Laser Engineering
Publish Year: 1390
نوع سند: مقاله کنفرانسی
زبان: English
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شناسه ملی سند علمی:
NCOLE02_209
تاریخ نمایه سازی: 24 اسفند 1389
Abstract:
This paper indicates the energy conversion efficiency of a quantum dot multilayer solar cell considering impact ionization effect. A p-i-n InxGa1-xN/GaN quantum dot solar cell structure has been taken into account in the calculation. It is shown that the efficiency of a cell strongly depends on the impact ionization in stacked quantum dots at i-region of the cell. In our proposed structure it is demonstrated that, if averaged probability of impact ionization, P, varies from zero to one, maximum efficiency increases by more than 12% (from 43 percent in P=0 to 55 percent in P=1). Also it is demonstrated that by decreasing θ, maximum efficiency increases and reaches to its maximum, 59%, in θ=2.
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Authors
Hossein Movla
Department of Solid State Physics, Faculty of Physics, The University of Tabriz, Tabriz ۵۱۵۶۶, Iran
Foozieh Sohrabi
Department of Solid State Physics, Faculty of Physics, The University of Tabriz, Tabriz ۵۱۵۶۶, Iran
Khadije Khalili
Photonics-Electronics Group, Research Institute for Applied Physics, and Astronomy (RIAPA), The University of Tabriz, Tabriz۵۱۶۶۵-۱۶۳, Iran
Hamed Azari Najafabadi
Photonics-Electronics Group, Research Institute for Applied Physics, and Astronomy (RIAPA), The University of Tabriz, Tabriz۵۱۶۶۵-۱۶۳, Iran
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