Study of electronic and mechanical properties of SiC monolayer
Publish place: The first international conference on research and new achievements in science, engineering and new technologies
Publish Year: 1400
نوع سند: مقاله کنفرانسی
زبان: English
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شناسه ملی سند علمی:
SETCONG01_091
تاریخ نمایه سازی: 22 آذر 1401
Abstract:
This article is a combination of two parts. The first part of the calculations was performed with the aim of investigating the electronic properties of monolayer silicon carbide based on density functional theory and implementation of Wien۲k computational code. The results of this section show that this nanostructure is a semiconductor with a direct gap of ۲.۳۹ eV along the K path, which is in good agreement with other research in this field, and this confirms the accuracy of the calculations. The second part of t he calculations was performed with the aim of investigating the mechanical properties of silicon carbide monolayer based on the molecular dynamics method and the implementation of the Lammps code and also with three different types of inter-atomic potentials (Tersoff, Vashishta and Meam). The results of this section include the report of stress and strain fracture values and Young's modulus for this material, which while comparing with other research works in this field, shows that the two potentials of Vashishta and Tersoff better describe the mechanical properties of silicon carbide.
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Authors
Atousa Dashti Moghadama
Razi University, Faculty of Science, Department of Physics, Baghabrigham Street, Kermanshah, Iran,
Samira Kazemi
Razi University, Faculty of Science, Department of Physics, Baghabrigham Street, Kermanshah, Iran