Tunable Ring Oscillators Based on HybridFGMOS/CNTFET Inverters with High Frequencyand Low Power

In this article, two tunable ring oscillators basedon FGMOS/CNTFET inverters are presented. The suggestedinverters in the structure of these ring oscillators are acombination of FGMOS technique and CNTFET transistor.Based on the simulations made with HSPICE software and theresults obtained in 32 nm technology and 0.8 V supply voltage,the oscillation frequency of these oscillators is in the adjustmentrange from 0.621-1.85 GHz and 0.427-1.345 GHz, respectively.The power consumption of the proposed oscillators varies from5.31-20.18 μW and from 3.22-13.65 μW in the range offrequency adjustment. Power delay product (PDP) has beenevaluated as a figure of merit (FOM) in this research. Based onthe obtained results, in the range of frequency tuning, the PDPvalue for the proposed designs is in the range of 1.425-1.816 fJand 1.256-1.799 fJ, respectively. The PDP of the proposeddesigns are extremely low compared to the advanced and up-todatetechniques, which makes these designs very suitable for lowpower and high frequency applications.

Tunable Ring Oscillators Based on HybridFGMOS/CNTFET Inverters with High Frequencyand Low Power Keywords:

ring oscillator (RO) , FGMOS/CNTFET inverter , tunable , power delay product (PDP)