خواص مغناطو - اپتیکی تک بلور GaP

The temperature dependence of magneto-optical and magneto-photoconductivity measurements were carried out in the range of (۲۰۰-۳۳۰) K. A home made optical cryostat was used for the measurements. The measured room temperature value of the energy gap was found to be ۲.۲۱۱ eV. The temperature coefficient of energy gap was found to be -۵.۴۸×۱۰-۴ eV/K obtained by the optical absorption method and -۴.۹۰×۱۰-۴ eV/K from the measurements of photoconductivity. The magnetic field coefficient of energy gap was found to be temperature dependent with values of ۱.۳۴×۱۰-۳ eV/Tesla at ۲۰۲ K and ۲.۶۷×۱۰-۳ eV/Tesla at room temperature, when the field used was up to ۲.۲ Tesla. The reduced effective mass of carriers are also calculated from both techniques and found to be changing from ۰.۰۳۴ m۰ to ۰.۰۲۱ m۰ when magneto-optical data was used in the calculations and from ۰.۰۵۲ m۰ to ۰.۰۳۲ m۰ when magneto-photoconductivity data was used as the temperature changed from ۲۲۰ K to ۳۳۰ K respectively.

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خواص مغناطو - اپتیکی , رسانش نوری , نیمه رساناها , GaP