A Novel Design of Penternary Inverter Gate Based on Carbon Nano Tube
Publish place: Journal of Optoelectronical Nanostructures، Vol: 3، Issue: 1
Publish Year: 1397
Type: Journal paper
Language: English
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Document National Code:
JR_JOPN-3-1_002
Index date: 14 February 2024
A Novel Design of Penternary Inverter Gate Based on Carbon Nano Tube abstract
This paper investigates a novel design of penternary logic gates usingcarbon nanotube field effect transistors (CNTFETs). CNTFET is a suitable candidate forreplacing MOSFET with some useful properties, such as the capability of having thedesired threshold voltage by regulating the diameter of the nanotubes. Multiple-valuedlogic (MVL) such as ternary, quaternary, and penternary is a promising alternative tothe binary logic design, because of less complexity, less computational step and reducedchip area. We propose two penternary inverters which are designed in the multiplevaluedvoltage mode based on CNTFET. In the first proposed design, the resistors areused to implement penternary logic whereas, in the second proposed design, they arereplaced with the transistors. Extensive simulation results using HSPICE represent thatthe two proposed designs reduce significantly the power consumption and delay andsensitivity to process variations as compared to the state-of-the-art penternary logiccircuit in the literature.
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A Novel Design of Penternary Inverter Gate Based on Carbon Nano Tube authors
Mahdieh Nayeri
Department of Computer Engineering, Kerman Branch, Islamic Azad University, Kerman, Iran.
peiman keshavarzian
Department of Computer Engineering, Kerman Branch, Islamic Azad University, Kerman, Iran.
Maryam Nayeri
Department of Electrical Engineering, Yazd Branch, Islamic Azad University, Yazd, Iran.
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