The effect of ambient temperature on the linear and nonlinear optical properties of truncated pyramidal-shaped InAs/GaAs quantum dot
Publish place: Journal of Optoelectronical Nanostructures، Vol: 6، Issue: 3
Publish Year: 1400
نوع سند: مقاله ژورنالی
زبان: English
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JR_JOPN-6-3_005
تاریخ نمایه سازی: 25 بهمن 1402
Abstract:
In this work, we calculated the energy levels of truncatedpyramidal-shaped InAs/GaAs QDs by using the finiteelement method by taking into account the ambienttemperature, because the system under study is notsymmetric, it is impossible to use the analytical methodto find the wave functions and energy levels of theelectron, and the finite element method is the solution tosuch problems. We showed that, with increasing thetemperature, the energy level of both the ground state andthe first excited state as well as S-to-P transitionfrequency increase. But the important point was that,increasing the temperature can shift linear and nonlinearsusceptibility graphs to higher frequencies. For example,for a pyramid with a base length of ۲۵ nm and a height of۵ nm, at zero and ۵۰۰ K the maximum linear andnonlinear susceptibility values are shifted from ۱۴terahertz to the ۱۸ terahertz. This ability can be effectivein designing optical devices.
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Authors
MohammadAmin ZekavatFetrat
Department of Physics, Marvdasht Branch, Islamic Azad University, Marvdasht, Iran
Mohammad Sabaeian
Department of Physics, Faculty of Science, Shahid Chamran University of Ahvaz, Ahvaz, Iran Center for Research on Laser and Plasma, Shahid Chamran University of Ahvaz, Ahvaz, Iran
Ghahraman Solookinejad
Center for Research on Laser and Plasma, Shahid Chamran University of Ahvaz, Ahvaz, Iran
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