Simulation of Inverter Circuits with Active Load Using Top-Contact Pentacene Thin Film Transistor
Publish place: First Iranian Conference on Nano Electronics
Publish Year: 1391
Type: Conference paper
Language: English
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Document National Code:
ICNE01_002
Index date: 30 April 2013
Simulation of Inverter Circuits with Active Load Using Top-Contact Pentacene Thin Film Transistor abstract
This paper presents the Simulation of Inverter with Active Load Using Top-Contact Pentacene Thin Film Transistor (TCPTFT) that modelling TCPTFT based onexperimental data using artificial neutral networks (ANN). In this paper for simulating this circuit with HSPICE software we used the proposed ANN model. Simulation result shows a veryhigh accuracy in comparison with the manufactured transistor. Due to its high accuracy and lower computational cost compared to the previous studies this model can be used in circuit simulators such as HSPICE
Simulation of Inverter Circuits with Active Load Using Top-Contact Pentacene Thin Film Transistor Keywords:
Simulation of Inverter Circuits with Active Load Using Top-Contact Pentacene Thin Film Transistor authors
Mohsen Hayati
Electrical Engineering Department, Faculty of Engineering, Razi University, Tagh-E-Bostan, Kermanshah
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