Improvement of Radiation Resistance in InGaP/GaAs/Ge Triple Junction Solar Cell by using AlInGaP and Grading Doping Concentration

This paper reports the high-energy electron irradiation effects on an experimental triple junction space solar cell comprised of InGaP/GaAs/Ge. The solar cells are irradiated byelectron with energy of 1MeV at a fluence ranging from 1×1014 to 1×1016cm-2, and then their electric parameters are measured atAM0. To improve the performance of the triple-junction (3J) solar cells we have utilized AlInGaP single-junction (SJ) cell instead o f G aAs i n t op o f t he middle c ell a nd d one grading doping concentration technique in top and middle layers. After optimization the top cell with the least degradation and Isc has emerged. The typical efficiency of the solar cells after optimization are =29.25%, Voc=2.354V, Isc=20.31mA,FF=0.8323 and Pmax=39.79mW/cm2 which we have obtainedthem at fluence level 1016 e/cm2. The combination of the results has prepared us a suitable characteristic of the 3J solar cell.

Keywords:

Triple junction solar cell , Radiation resistance , Graded doping ,