Enhancing SOI MESFET Performance through Gate Electrode Shifting and Optimization Using Nickel and Oxide Layers

In this paper, a new SOI MESFET structure is presented with modifications made to the channel of the transistor. The gate electrode is shifted near the source, and two parallel layers of oxide and aluminum are added at the edge of the gate, along with an additional aluminum layer along the channel. These changes have significantly improved the DC and RF specifications compared to the conventional structure. The breakdown voltage has increased from 15.8 V in the conventional structure to 30.7 V in the proposed structure. Due to the increase in transconductance and the significant decrease in gate-source and gate-drain capacitance, the cut-off frequency has increased from 19.3 GHz to 35.5 GHz, and the maximum oscillation frequency has risen from 80 GHz to 154 GHz. Additionally, the maximum output power has significantly increased from 0.238 W/mm in the base structure to 0.876 W/mm in the proposed structure, marking a 3.6-fold improvement. Therefore, the results demonstrate that the proposed structure is efficient and capable of operating with high power and high frequency.

Enhancing SOI MESFET Performance through Gate Electrode Shifting and Optimization Using Nickel and Oxide Layers Keywords:

SOI MESFET , Breakdown Voltage , Cut-Off Frequency , MaximumOscillation Frequency ( Fmax)