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Comparing the methods of reducing recombination inthe ETL layer of perovskite solar cells and calculatingthe efficiency of each of the methods and the method ofdoping the layer with SnO2

Publish Year: 1403
Type: Conference paper
Language: English
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ICIRES19_001

Index date: 24 December 2024

Comparing the methods of reducing recombination inthe ETL layer of perovskite solar cells and calculatingthe efficiency of each of the methods and the method ofdoping the layer with SnO2 abstract

To reduce recombination in the ETL layer ofperovskite solar cells, several methods are employed: surfacepassivation (30-40% improvement) reduces trap states at theperovskite/ETL interface, improving charge extraction;improving ETL material quality (20-30%) through bettercrystallinity and morphology decreases defects; optimizingenergy band alignment (10-20%) ensures efficient electrontransfer, minimizing energy losses; adding an interfacial layer(10-15%) between perovskite and ETL reduces directrecombination; and doping the ETL material (5-10%) enhancesconductivity and reduces trap-assisted recombination. Thecombined use of these techniques can significantly enhance thecell's efficiency.

Comparing the methods of reducing recombination inthe ETL layer of perovskite solar cells and calculatingthe efficiency of each of the methods and the method ofdoping the layer with SnO2 Keywords:

Comparing the methods of reducing recombination inthe ETL layer of perovskite solar cells and calculatingthe efficiency of each of the methods and the method ofdoping the layer with SnO2 authors

Mehran Hosseeinzadeh Dizaj

PhD in ElectronicEngineeringFaculty of Electrical EngineeringIslamic Azad University, Central Tehran BranchTehran, Iran

Fatemeh Shahnavaz

PhD in Chemistry EngineeringFaculty of Chemistry EngineeringIslamic Azad University, Central Tehran BranchTehran, Iran

Shahed Chehrdoust Shishvan

PhD in Electronic EngineeringFaculty of Electrical EngineeringIslamic Azad University, Central Tehran BranchTehran, Iran