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An innovative method of using a CIS sub-layer in the HTL layerto increase the amount of mobility and check the simulation inSCAPS software

Publish Year: 1403
Type: Conference paper
Language: English
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EESCONF14_008

Index date: 15 March 2025

An innovative method of using a CIS sub-layer in the HTL layerto increase the amount of mobility and check the simulation inSCAPS software abstract

Perovskite solar cells (PSCs) have emerged as a transformative technology in the field ofrenewable energy due to their high efficiency, low-cost fabrication, and adaptability to existingphotovoltaic systems. Standard PSCs demonstrate power conversion efficiencies (PCE) between20–25%, with short-circuit current densities (Jsc) of 22–25 mA/cm² and fill factors (FF) near0.8–0.84. However, the inclusion of copper indium selenide (CIS) as a doping material hasshown significant potential to enhance these metrics. By integrating CIS, the PCE can reach upto 26%, with an increase in Jsc to approximately 28 mA/cm², owing to improved chargetransport, reduced non-radiative recombination, and enhanced quantum efficiency. This studyhighlights the comparative performance of standard and CIS-doped PSCs, demonstrating howstrategic doping not only improves device efficiency but also addresses stability and scalabilitychallenges. These findings provide a pathway for advancing PSC technologies towardcommercial viability and broader deployment in sustainable energy systems.

An innovative method of using a CIS sub-layer in the HTL layerto increase the amount of mobility and check the simulation inSCAPS software Keywords:

An innovative method of using a CIS sub-layer in the HTL layerto increase the amount of mobility and check the simulation inSCAPS software authors

Mehran Hosseinzadeh Dizaj

Islamic Azad University, Central Tehran Branch

Amir Assari

Jundi-Shapur University of Technology

Fatemeh Shahnavaz

Islamic Azad University, Central Tehran Branch

Shahed Chehrdoust Shishvan

Islamic Azad University, Central Tehran Branch