Electrical Parameters of Phosphorous Spin–on Diffusion of Polysilicon Solar Cells
Publish place: 22nd International Power System Conference
Publish Year: 1386
Type: Conference paper
Language: Persian
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Document National Code:
PSC22_281
Index date: 5 May 2007
Electrical Parameters of Phosphorous Spin–on Diffusion of Polysilicon Solar Cells abstract
This paper describes the fabrication of polysilicon cell with phosphorous spin-on diffusion technique and the electrical parameters measurement of the fabricated solar cells . The current-voltage characteristics of polycrystalline silicon solar cells were measured in the dark . A diode quivalent model was used to describe the electrical properties of solar cells. The diode ideality factor , the saturation current , the series and
shunt resistance have been measured . The best series resistance which has been obtained for polysilicon solar cell has a value of about 3 Ω . The best shunt resistance is about 14.5 kΩ and the saturation current and the A factor of the polysilicon solar cell which is fabricated by
the phosphorous spin-on diffusion method , are respectively 0.00003 A and 3.2 .
Electrical Parameters of Phosphorous Spin–on Diffusion of Polysilicon Solar Cells Keywords:
Electrical Parameters of Phosphorous Spin–on Diffusion of Polysilicon Solar Cells authors
Azimi-Nam
Department of Advanced Material & Renewable Energy , Iranian Research and Organization for Science and Technology
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