SCEs Investigation of Tri-Gate SOI FinFET in Different Channel Lengthes

compact scaling length for Tri-gate SOI FinFET is presented based on a 3-D simulation. SCEs of FinFETs can be controlled by changing the gate length.Changing channel length is between 10 to 100 nm. output characteristics, transfer characteristic, threshold voltage, subthreshold slope and drain induced barrier lowering (DIBL), gm, ION/IOFF ratio, ro are investigated

Keywords:

FinFET , SOI , SCEs , Vth , ION , IOFF ratio , gm , DIBL , subthreashold slop