A low power and high gain CMOS LNA for UWB applications using a gate inductor
Publish place: The Second International Conference and the Third National Conference on the Application of New Technologies in Engineering Sciences
Publish Year: 1394
Type: Conference paper
Language: English
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ITCC02_535
Index date: 11 September 2016
A low power and high gain CMOS LNA for UWB applications using a gate inductor abstract
A new ultra wideband low noise amplifier is presented.The ultra wideband LNA consists of two simple amplifiers. A common source topology by gate inductor is adopted for input stage to achieve wideband input matching and wider bandwidth. The second stage by noise cancelling technique achivies high flat gain .Realized in standard TSMC8110μM CMOS. It achieves a maximum power gain of 11.0 dB, a bandwidth of 18GHz and 414dB minimum noise fiqure.The power consumption is 22mW from a 110v supply.
A low power and high gain CMOS LNA for UWB applications using a gate inductor Keywords:
A low power and high gain CMOS LNA for UWB applications using a gate inductor authors
Meysam Azimi-Roein
Islamic Azad University Bojnourd, Iran
Abbas Golmakani
Sadjad University of Technology Mashhad, Iran
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