PECVD-grown Vertically-aligned Carbon Nano-tubes on Silicon Substrate, Utilized to Realize a Preliminary Display

Embedded vertically aligned carbon nanotubes in titanium oxide are fabricated and their electron emission behaviour is studied. Growth of carbon nanotubes is achieved using a DC-PECVD method with a mixture of acetylene and hydrogen. Titanium oxide is deposited using an atmospheric pressure CVD to encapsulate the grown carbon nanotubes. Physical properties of the carbon nanotubes as well as the encapsulated structures have been investigated using TEM and SEM tools. The electron emission characteristics of the encapsulated nanotubes have been utilized to realize a preliminary display. By addition of a metal layer in the fabrication process, gated field emission nano-transistors are fabricated which show a high on-off ratio.

Keywords:

Carbon nanotube , Field-emission display , nano-transistor , PECVD