An Energy Recovery Static RAM With MEQUL Transistor And Driving Line Technique in voltage mode
Publish place: 14th Iranian Conference on Electric Engineering
Publish Year: 1385
Type: Conference paper
Language: English
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Document National Code:
ICEE14_324
Index date: 15 July 2008
An Energy Recovery Static RAM With MEQUL Transistor And Driving Line Technique in voltage mode abstract
In this paper, we introduce a new low-power SRAM cell with seven transistors. The design is based on energy recovery and driving source line cell that reduces the power dissipation associated with write operations. The new memory is designed using 0.6μm CMOS technology and operates in voltage mode with 5 Volts power supply. Simulation results indicate that the energy saving is improved about 20% in read cycle and 40% in write cycle at 166MHz, compared to conventional design. The layout penalty of seven-transistor cell is negligible compared to 6-transistor SRAM.
An Energy Recovery Static RAM With MEQUL Transistor And Driving Line Technique in voltage mode Keywords:
An Energy Recovery Static RAM With MEQUL Transistor And Driving Line Technique in voltage mode authors
Hassan Abdollahi
Islamic Azad University, south Tehran Branch and Shahid Sattari Air University,
Abdolreza Nabavi
Tarbiat Modarres University.
Satar Mirzakuchaki
Iran University of Science and Technology
Afsaneh Haghnegahdar
Iran University of Science and Technology
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