Electrical and Photoconductor Properties for Au/ZnO/ p-Si Photoconductive Detectors
Publish place: The 13th scientific conference of students of material engineering and metallurgy of Iran
Publish Year: 1395
نوع سند: مقاله کنفرانسی
زبان: English
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شناسه ملی سند علمی:
SCMEMI13_185
تاریخ نمایه سازی: 6 بهمن 1395
Abstract:
Zinc oxide thin films was deposited by chemical spray pyrolysis (CSP) at 400 °C substrate temperature and different thickness (60, 80, and 100) nm on the texturized p-Si wafer to fabricate Au/ZnO/p-Si photoconductive detectors. Electrical and photoconductor properties are investigated for the samples. The electrical properties of heterojunction were obtained by I-V (dark and illuminated). The results demonstrated that all the samples show strong rectifying behavior. The saturation current and the ideality factor increases with increasing of thickness.It is observed that illumination of the junction, more carriers are generated and forward current increases. The spectral response of detector was calculated. The maximum value of responsivity occurred at wavelength between (385-395) nm. The values of specific detectivity (D*) and quantum efficiency (Q.E) increases and shift to higher wavelength with increase of thickness. So we can say from this result the (Au/ZnO/p-Si) is photodetector in (UV) region.
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Authors
Abdulazeez O. Mousa
Ph.D University of Babylon
Nadir F. Habubi
University of Al-Mustansiriyah,Ph.D
Noor A. Nema
University of Babylon Ph.D.
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