Optimization of carbon nanotube field-effect transistors (CNTFET) and compare them to CMOS silicon
Publish Year: 1394
نوع سند: مقاله ژورنالی
زبان: English
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شناسه ملی سند علمی:
JR_UJRSET-3-4_002
تاریخ نمایه سازی: 13 تیر 1396
Abstract:
In this paper, a brief review of CNT carbon nanotube transistors will be explained and thenthe optimization methods will be discussed. Details of AC and DC transistor CNFET andCharacteristics of CNFET at high temperature also shows that unlike MOSFET flo below thethreshold for this type of component temperature is reduced, thus using CNFET at hightemperatures can be more quickly and less leakage current is achieved. Processes for thesynthesis of CNT are not complete, a subject of controversy in the field fluctuations of densityin CNT growth, as well as an analysis of the credit CNFET because sway density of CNTcould lead to complete failure CNFET, so to evaluate it, and we later CNFET applications incomparison with CMOS logic circuits using the latest research, we ll CNFET.
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Authors
Mahdi Salimi
Department of Engineering, Ardabil Branch, Islamic Azad University, Ardabil, Iran
Kamran Khoddam
Department of Engineering, Ardabil Branch, Islamic Azad University, Ardabil, Iran
Darya Morakkabatchy
Department of Engineering, Ardabil Branch, Islamic Azad University, Ardabil, Iran
Maryam Pornadem
Department of Engineering, Ardabil Branch, Islamic Azad University, Ardabil, Iran