Design and Implementation of MOSFET Circuits and CNTFET Ternary Multiplier in the Field of Galois

During the past times, mostly the MOSFET transistor had been used for thedesign and implementation of the digital integrated circuits for the reason that theywere compact,transistors. Among the MVL, Ternary Multiplier field because of less evaluated costof installation and the simple method for implementation of the electronic circuitsare considered more than theon MOSFET transistor as well, the CNTFET transistor by the use of TernaryMultiplier field of Galois were designed and implemented by Hspice. We haveobtained the behavior of this power and delaytemperatures and voltages by controlling the related threshold, and also we havegained the deviation percentage of the average for these two parameterthey have the less power consumption and delay to the otherother ones.In this article, the multiplier circuits basedof these circuits in differents.

Design and Implementation of MOSFET Circuits and CNTFET Ternary Multiplier in the Field of Galois Keywords:

Galois , Ternary Multiplier , CNTFET , MOSFET , Field Effect TraNano-Tubesnsistors , Carbon