سیویلیکا را در شبکه های اجتماعی دنبال نمایید.

Analytically investigation localizing defect modes in 1D photonic crystal containing Left and Right-Handed material defect

Publish Year: 1396
Type: Conference paper
Language: English
View: 532

This Paper With 11 Page And PDF Format Ready To Download

Export:

Link to this Paper:

Document National Code:

NRSEC01_007

Index date: 26 February 2018

Analytically investigation localizing defect modes in 1D photonic crystal containing Left and Right-Handed material defect abstract

In this paper, we theoretically investigate the dispersion behavior of localized defect modes supported by a defect layer sandwiched within two symmetric semi-infinite one-dimensional photonic crystals (1D PCs) composed of left- handed (LH) and right-handed (RH) materials defect. We used an analytical direct matching procedure within the Kronig-Penny model to analyze the dispersion properties of the localized defect states. We show that the characteristics of defect modes created in the 1D PC with LH layers are significantly different from those created in the structure composed of RH layers. Also, we show that the dispersion of defect mode for the RH material are positive while for the left handed material these modes can be negative or nearly zero in a wide range of radiation angle and frequency. In addition, we propose an approach to calculate the applied electric field intensity that leads to dispersion of defect modes from forward to backward when the parameters of the defect layer vary.

Analytically investigation localizing defect modes in 1D photonic crystal containing Left and Right-Handed material defect Keywords:

Analytically investigation localizing defect modes in 1D photonic crystal containing Left and Right-Handed material defect authors

Behnam Kazempour

Department of physics, Ahar Branch, Islamic Azad University, Ahar, Iran