Characterization of Photodiodes, Made from a p– type Epitaxial Layer Grown on n- type InSb < 111> By LPE method

In this article the performance of photodiodes made on epitaxial grown layers of p–InSb on n-type InSb substrates is reported. The effect of increasing Cd atomic weigh percent on p- type carrier concentration and mobility at 77K is also discussed. In our epitaxial growth method, a ramp cooling technique was used. Finally by improving growth parameters such as growth temperature, prior cleaning of B-face (Sb)n-InSb substrates and different cooling rates, adequate epitaxial layers of p–InSb on n–InSb<111> and consequently highly sensitive photodiodes have been obtained .A high detectivety for photodiodes fabricated by liquid phase epitaxial (LPE) method was measured using optoelectronic tests. Several other tests such as Hall Effect, thickness measurements, I–V and x-ray diffraction (XRD) were also performed and morphology images will be presented in this paper.

Characterization of Photodiodes, Made from a p– type Epitaxial Layer Grown on n- type InSb < 111> By LPE method Keywords:

InSb epitaxial layer , LPE , Ramp cooling , Growth temperature , homogenization temperature , cleaning InSb