High-power, high temperature and single mode dilute nitrogen vertical-cavity surface-emitting lasers at 1550nm

We propose a new DBR material GaAsN/AlAsN with dilute nitrogen for long wavelength VCSELs and the single transverse mode emission and thermal behavior of oxide-confined N-dilute Vertical Cavity Surface Emitting Lasers. VCSELs with asymmetric double oxide aperture and highly strained GaInNAsSb quantum wells have been investigated. We report our results including spatial gain distribution at high ambient temperatures over the entire C-band, output power, thermal roll-over, small large signal modulation response characteristics of continuous wave (cw) 1550 nm VCSEL. We solve Space and Time dependent rate equations contains (spontaneous +SRH +AUGER +carrier diffusion) with Thermal equation by 1-D fixed step finite difference method and optimize our novel structure to have high power ,high temperature ,single mode N-VCSELs suitable for DWDM systems. Our results compared with a conventional VCSELs with a single oxide.

High-power, high temperature and single mode dilute nitrogen vertical-cavity surface-emitting lasers at 1550nm Keywords:

1.55μm N-VCSELs , GaInNAsSb QWs , GaAsN/AlAsN DBR , thermal effect