Structural and morphological properties of ITO thin films grown by magnetron sputtering
Publish place: Journal of Theoretical and Applied Physics، Vol: 9، Issue: 4
Publish Year: 1394
نوع سند: مقاله ژورنالی
زبان: English
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شناسه ملی سند علمی:
JR_JTAP-9-4_004
تاریخ نمایه سازی: 27 مرداد 1397
Abstract:
Physical properties of transparent and conductingindium tin oxide (ITO) thin films grown byradiofrequency (RF) magnetron sputtering are studiedsystematically by changing deposition time. The X-raydiffraction (XRD) data indicate polycrystalline thin filmswith grain orientations predominantly along the (2 2 2) and(4 0 0) directions. From atomic force microscopy (AFM) itis found that by increasing the deposition time, theroughness of the film increases. Scanning electron microscopy(SEM) images show a network of a high-porosityinterconnected nanoparticles, which approximately have apore size ranging between 20 and 30 nm. Optical measurementssuggest an average transmission of 80 % for theITO films. Sheet resistances are investigated using fourpointprobes, which imply that by increasing the filmthickness the resistivities of the films decrease to2.43 x 10(-5) Ω cm.
Keywords:
Indium tin oxide Magnetron sputtering Thickness
Authors
Z Ghorannevis
Department of Physics, Karaj Branch, Islamic Azad University, Karaj, Iran
E Akbarnejad
Plasma Physics Research Centre, Science and Research Branch, Islamic Azad University, Tehran, Iran
M Ghoranneviss
Plasma Physics Research Centre, Science and Research Branch, Islamic Azad University, Tehran, Iran