Investigating the Doping Effect on Carbon Nanotube Field Effect Transistors and its effect on Drain Induction Barrier Reduction

After the discovery of nanotubes, there have been dramatic improvements into the field effect transistors and carbon nanotubes physical and technological modeling. Dimension reduction cause to change some characteristics of transistor such as Drain Induction Barrier Reduction. Drain potential into the channel region can have a significant effect on the performance carbon nanotubes transistors, drain induction barrier reduction is one of parameters is affected by these changes which we will deal about it. In this paper, the electrical characteristic and the effects of reducing induced drain barrier in the carbon nanotubes field effect transistors are investigated using an unbalanced Green function. It can be seen that increase in the channel length cause to the decreases the drain induction barrier and also increasing the oxide thickness increases thisparameter, and increasing the diameter of the channel increases the reduction of drain induction barrier in the carbon nanotubes transistors.

Investigating the Doping Effect on Carbon Nanotube Field Effect Transistors and its effect on Drain Induction Barrier Reduction Keywords:

Carbon Nanotube Field Effect Transistors , Doping Effect , channel length effect , Channel Diameter Effect