Band offsets in strained layer superlattices
Publish place: The Physics Society Of Iran، Vol: 4، Issue: 3
Publish Year: 1383
Type: Journal paper
Language: English
View: 339
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Document National Code:
JR_PSI-4-3_012
Index date: 20 January 2019
Band offsets in strained layer superlattices abstract
Band offsets at semiconductor heterojunctions have been shown to be critically dependent on a number of factors. By applying the ab-initio pseudopotential method to the strained InGaAs/GaAs superlattice, we have been able to determine the dependence of the offsets on the strain in the system and on the indium composition. In addition, we have shown that it is possible to control the interface band discontinuities by the introduction of an interlayer of Ge at the interface
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Band offsets in strained layer superlattices authors
m oloumi
Department of Physics, Urmia University, Urmia, Islamic Republic of Iran
c c matthai
Department of Physics and Astronomy, Cardiff University, P.O. Box ۹۱۳, Cardiff, CF۲ ۳YB, UK.
t h shen
Department of Physics and Astronomy, Cardiff University, P.O. Box ۹۱۳, Cardiff, CF۲ ۳YB, UK.